Breakdown voltage analysis for the new RESURF AlGaN/GaN HEMTs

Breakdown behaviour of high-voltage GaN-HEMTs

On-resistance and Breakdown in Resurf-devices

One key issue for high voltage CMOS structures is the proper design of the output driver devices, which are usually lateral DMOS transistors (LDMOST). We present an analysis of a LDMOST and an ALDMOST (accumulation LDMOST) with respect to ON-resistance, punch-through and avalanche breakdown.

High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers

In this paper, we numerically study an enhancement of breakdown voltage in AlGaN/GaN high-electron-mobility transistors (HEMTs) by using the AlGaN/GaN/AlGaN quantum-well (QW) electron-blocking layer (EBL) structure. This concept is based on the superior confinement of two-dimensional electron gases (2-DEGs) provided by the QW EBL, resulting in a significant improvement of breakdown voltage and ...

Breakdown Enhancement Voltage of Algan/Gan Hemts with Schottky and OHMIC Drain Contacts

In present scenario high voltage AlGaN/GaN High Electron Mobility Transistors (HEMTs) on Si substrate with Schottky drain contacts were simulated to increase the breakdown voltage by replacing the conventional Ohmic drain contacts. A significant increase in breakdown voltage values was achieved for nonannealed Schottky contacts by elimination of metal spikes underneath drain electrodes. The bre...

Temperature Dependence of Breakdown Voltage in InAlAsDnGaAs HEMTs: Theory and Experiments

We present results of an experimental and theoretical study of the temperature dependence of the off-state breakdown voltage of InAlAsDnGaAs high electron mobility transistors (HEMTs). We find that the breakdown voltage (BV) has a negative temperature coefficient that is more prominent for lower values of the extrinsic sheet carrier concentration (nJ. Structural parameters such as the insulator...